4.6 Article

Gamma-ray attenuation, fast neutron removal cross-section and build up factor of Cu2MnGe[S, Se, Te]4 semiconductor compounds: Novel approach

Journal

RADIATION PHYSICS AND CHEMISTRY
Volume 179, Issue -, Pages -

Publisher

PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.radphyschem.2020.109248

Keywords

Cu2MnGeS4; Cu2MnGeSe4; And Cu2MnGeTe4; Semiconductor compounds; gamma-ray attenuation; Fast neutron removal cross-section; Build up factors

Funding

  1. Ministry of Education, Kingdom of Saudi Arabia under the Promising Centre for Sensors and Electronic Devices (PCSED) at Najran University, Kingdom of Saudi Arabia [PCSED-018-18]
  2. Deanship of Scientific Research at King Khalid University [G.R.P.177/40]

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This study focuses on investigating the gamma-ray interaction parameters of three different semiconductor compounds, with Cu2MnGeSe4 and Cu2MnGeTe4 showing higher MAC and LAC values compared to standard glass materials. Additionally, these semiconductor compounds have better neutron protection features and higher sensing abilities for gamma-rays and neutrons than traditional glassy materials.
This study is original work on semiconductor materials for gamma-ray detectors and fast neutron removal cross-section. This work is focused on the investigating of gamma-ray interactions using Cu2MnGeS4, Cu2MnGeSe4, and Cu2MnGeTe4 semiconductor compounds. The photon interaction parameters (MAC, LAC, HVL, TVL, MEF, ACS, ECS, Z(eff), N-eff, C-eff, Z(eq), EBF, and EABF) of the three different semiconductor compounds were graphically presented within 0.015-15 MeV energy range. A useful comparison with regular radiation shielding with standard glass materials with these samples has been developed. Cu2MnGeSe4 and Cu2MnGeTe4 semiconductor compounds have higher values of MAC and LAC compared with ordinary and steel magnetite concrete at the 0.1, 10, and 15 MeV. Interestingly, the checked semiconductor samples named Cu2MnGeSe4 andCu(2)MnGeTe(4) have lower values for HVL and MFP than some commercial glasses used in radiation safety applications. At 15 KeV, Z(eff) values are 27.13, 32.11 and 39.21 and N-eff values are 3.41, 2.71 and 2.47 x 10(23) electron cm(-3) for Cu2MnGeS4, Cu2MnGeSe4, and Cu2MnGeTe4 semiconductor compounds, respectively. Semiconductor compounds have better neutron protection features compared to RS-520, RS-253-G18, and RS-360 standard glassy materials. In a large energy range, the third sample, Cu2MnGeTe4, showed high sensing for gamma-rays and neutrons. These studies are very important for the manufacture of detectors for semiconductors used for X and gamma-ray measurements (detection of radiation).

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