Surface transfer doping of diamond: A review

Ultra-wide bandgap materials show great promise as a solution to some of the limitations of current state of the art semiconductor technology. Among these, diamond has exhibited great potential for use in high-power, high-temperature electronics, as well as sensing and quantum applications. Yet, significant challenges associated with impurity doping of the constrained diamond lattice remain a primary impediment towards the development of diamond-based electronic devices. An alternative approach, used with continued success to unlock the use of diamond for semiconductor applications, has been that of ?surface transfer doping? -a process by which intrinsically insulating diamond surfaces can be made semiconducting without the need for traditional impurity doping. Here, we present a review of progress in surface transfer doping of diamond, both a history and current outlook of this highly exploitable attribute.

Automated summary

Ultra-wide bandgap materials, such as diamond, have shown great potential for high-power, high-temperature electronics, sensing, and quantum applications. Surface transfer doping has been a successful alternative approach to transform intrinsically insulating diamond surfaces into semiconductors without traditional impurity doping.