Journal
PROGRESS IN QUANTUM ELECTRONICS
Volume 77, Issue -, Pages -Publisher
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.pquantelec.2021.100323
Keywords
III-Nitride semiconductor; Laser; Microdisk; Heteroepitaxy; Stress; Defect; Nanostructures; Monolithic integration; Silicon photonics
Categories
Funding
- Key-Area R&D Program of Guangdong Province [2019B010130001, 2019B090917005, 2019B090904002, 2019B090909004, 2020B010174004]
- Strategic Priority Research Program of CAS [XDB43000000, XDB43020200]
- Key Research Program of Frontier Sciences, CAS [QYZDB-SSWJSC014, ZDBS-LY-JSC040]
- CAS Interdisciplinary Innovation Team
- National Natural Science Foundation of China [61534007, 61775230, 61804162, 61874131, 62074158]
- Jiangsu Provincial Key RD Program [BE2020004-2]
- Natural Science Foundation of Jiangsu Province [BK20180253]
- Suzhou Science and Technology Program [SYG201927]
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This article discusses the challenges and solutions in the direct growth of high-quality III-nitride semiconductor laser materials on Si substrates, as well as the recent progress and further development prospects.
III-nitride semiconductor laser directly grown on Si is a potential on-chip light source for Si photonics. Moreover, it may greatly lower the manufacture cost of laser diodes and further expand their applications. Therefore, III-nitride lasers grown on Si have been pursued for about two decades. Different from GaN homoepitaxy on free-standing GaN substrates, III-nitride semiconductors grown on Si substrates are usually rich with strain and threading dislocations due to the large mismatch in both lattice constant and coefficient of thermal expansion between GaN and Si substrates, which hindered the realization of electrically injected lasing. The key challenges in the direct growth of high-quality III-nitride semiconductor laser materials on Si substrates, as well as their corresponding solutions, are discussed in detail. Afterwards, a comprehensive review is presented on the recent progress of III-nitride semiconductor lasers grown on Si, including FabryPe = rot cavity lasers, microdisk lasers, and the lasers with nanostructures, as well as the monolithic integration of lasers on Si. Finally, the further development of III-nitride semiconductor lasers grown on Si is also discussed, including the material quality improvement and novel device structures for enhancing optical confinement and reducing electrical resistance, with a great prospect for better performance and reliability.
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