Dielectric dispersion and relaxations in (PMMA/PVDF)/ZnO nanocomposites

In latest years, the scientific community has shown important interest in nanocomposites as a new generation of materials with elevated dielectric constant and low dielectric loss factor for microelectronics. In this work, the effect of ZnO nanoparticles on PMMA/PVDF blend. Solution-cast technique used to prepare these nanocomposites. FTIR and SEM studies were performed. The effect of ZnO doping on the complex dielectric permittivity, electric modulus properties and ac electrical conductivity of these nanocomposites has been investigated at ambient temperature. Dielectric constant epsilon ', dielectric loss epsilon '', and the loss tangent decreased with increasing frequency and increased with increasing temperature. The dielectric constant values were found almost high (similar to 24) at (100 Hz) and were referred to the presence of interfacial polarization. The existence of loss peak in epsilon '', tan delta and, M attributed to alpha-relaxation existed in the nanocomposites. The temperature-dependent ac conductivity values obeyed Arrhenius behavior. These nanocomposites can be selected for implying capacitors and application of the memory device.

Automated summary

In this study, the effects of ZnO nanoparticles on PMMA/PVDF blend were investigated by using solution-cast technique to prepare nanocomposites. FTIR and SEM studies were conducted to analyze the properties. The results showed that the nanocomposites exhibited high dielectric constant and low dielectric loss, making them suitable for capacitors and memory device applications.