Journal
PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS
Volume -, Issue -, Pages -Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/pssr.202100015
Keywords
annealing; hole transport; hydrogen diffusion; silicon heterojunction solar cells; work function
Funding
- National Natural Science Foundation of China [62004208, 62074153]
- Innovation Development Fund of Shanghai Zhangjiang [ZJ2018-ZD-010]
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The diffusion of hydrogen atoms can reduce the Schottky barrier between p-a-Si:H and IWO, thereby improving the hole transport in SHJ solar cells and increasing both the fill factor and power conversion efficiency.
The Schottky barrier is a fundamental issue when an n-type transparent conductive oxide (TCO) is contacted with p-type hydrogenated amorphous silicon (p-a-Si:H) in silicon heterojunction (SHJ) solar cells. Herein, it is found that the hydrogen (H) atoms in p-a-Si:H diffuse into tungsten-doped indium oxide (IWO) during annealing, which improves the electric properties of both the IWO films and the p-a-Si:H/IWO interface. H diffusion reduces the surface work function of p-a-Si:H, and thus reduces the Schottky barrier between the p-a-Si:H and the IWO. Consequently, it improves the hole transport of SHJ solar cells; i.e., both the fill factor (FF) and power conversion efficiency (PCE) substantially increase. These findings provide a new strategy to optimize the FF of SHJ solar cells.
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