Journal
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS
Volume 258, Issue 5, Pages -Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/pssb.202000622
Keywords
alpha-Ga2O3; deep-level optical spectroscopy; deep traps; photocapacitance; trap levels
Categories
Funding
- Council for Science, Technology and Innovation (CSTI), Cross-ministerial Strategic Innovation Promotion Program (SIP), Energy Systems of an Internet of Energy (IoE) Society (Funding agency: JST)
Ask authors/readers for more resources
Deep traps in n-type alpha-Ga2O3 grown by mist chemical vapor deposition are analyzed, revealing trap levels at approximately 2.0 eV, 2.5 eV, and 3.2 eV. The concentrations of these traps are lower than previously reported for alpha-Ga2O3, and a large Frank-Condon shift indicates a high degree of lattice coupling in the midgap state of alpha-Ga2O3.
Deep traps in n-type alpha-Ga2O3 grown by mist chemical vapor deposition are analyzed by the photocapacitance method and deep-level optical spectroscopy. The trap levels at E-c-(approximate to 2.0 eV) (E-1), E-c-(approximate to 2.5 eV) (E-2), and E-c-(approximate to 3.2 eV) (E-3) are evident and their concentrations are 3.5 x 10(14), 3.6 x 10(14), and 6.2 x 10(15) cm(-3), respectively, which are much lower than ever reported for alpha-Ga2O3. The Frank-Condon shift of all three traps is large as seen for beta-Ga2O3, indicating a high degree of lattice coupling in the midgap state in alpha-Ga2O3.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available
Share Paper
