Intrinsic Amorphous Silicon Bilayers for Effective Surface Passivation in Silicon Heterojunction Solar Cells: A Comparative Study of Interfacial Layers

The impact of intrinsic amorphous silicon bilayers in amorphous silicon/crystalline silicon (a-Si:H/c-Si) heterojunction solar cells is investigated. Intrinsic a-Si:H films with a wide range of film densities and hydrogen contents are prepared via a plasma-enhanced chemical vapor deposition (PECVD) technique by modifying various process parameters. For silicon heterojunction (SHJ) solar cells with a-Si:H films applied as single i-layers, the resulting surface passivation at the a-Si:H/c-Si interface is poor. However, surface passivation is significantly improved by applying intrinsic bilayers, which are composed of a porous interfacial layer (approximate to 2 nm) and an overlying dense layer (approximate to 8 nm). The microstructure factor R* of the interfacial a-Si:H layer, which is related to the Si-H bond microstructure and determined by infrared absorption spectroscopy, closely correlates to the surface passivation capability of the bilayers. A variety of PECVD process parameters (temperature, pressure, or precursor gas species) can be utilized to grow an interfacial layer for good surface passivation, provided that its R* is controlled within a suitable range. This indicates that R* is a key universal parameter for optimizing i-bilayers and realizing high-efficiency SHJ solar cells.

Automated summary

The impact of intrinsic amorphous silicon bilayers on surface passivation in a-Si:H/c-Si heterojunction solar cells was investigated. By controlling the microstructure factor R* of the interfacial layer, high-efficiency solar cells can be achieved through the optimization of intrinsic bilayers. Various PECVD process parameters can be utilized to grow interfacial layers with good surface passivation capabilities.