Multifunctionalities of 2D MoS2 self-switching diode as memristor and photodetector

Self-switching diodes (SSD) were fabricated at the wafer level on a 2D few-layer MoS2 thin film (7 monolayers) grown on a 4-inch Al2O3/high-resistivity silicon wafer via Chemical Vapor Deposition (CVD). We report here that MoS2 behaves as a transparent piezoelectric material in the near infrared spectral region and as a strain-induced ferroelectric material with a measured d(33) piezoelectric coefficient of 3-10 pm/V depending on the applied AC voltage. Moreover, we demonstrate experimentally that the SSDs behave as lateral memristors and as photo-detectors in the visible spectrum, with responsivities as high as 17 A/W.

Automated summary

Research found that MoS2 behaves as a transparent piezoelectric material in the near infrared spectral region and as a strain-induced ferroelectric material. Experimental demonstration shows that SSDs can function as lateral memristors and photo-detectors in the visible spectrum.