Spin Seebeck effect in the 2D ferromagnetic CrPbTe3

Spin Seebeck effect has been mostly explored in bulk magnetic materials, but the efficiency is not large enough for device application. Recently, we have found that the 2D ferromagnetic CrPbTe3 layer has rather a high Curie temperature of 110 K. Thus, we have investigated the spin dependent Seebeck effect using the Boltzmann transport approach. We have found the largest carrier mobility and relaxation time in the minority spin electron carrier system due to the spin dependent effective mass and deformation potential constant. The onset energy of the electrical conductivity shows spin and carrier type dependency. Thus, both effective spin and effective charge Seebeck coefficients are originated from the majority spin carrier in the hole doped system whereas the minority spin carrier controls the effective spin and effective charge Seebeck coefficient in the electron doped system. We have obtained the maximum spin Seebeck coefficient of 1320 mu V/K at 50 K. This value is suppressed at 100 K, but we still find a large spin Seebeck coefficient of 715 mu V/K.

Automated summary

The spin Seebeck effect was investigated in a 2D ferromagnetic CrPbTe3 layer, revealing insights into minority spin electron carriers and their impact on effective mass and deformation potential. The study also found dependencies on spin and carrier type in the electrical conductivity onset energy, with the majority spin carrier controlling effective spin and charge Seebeck coefficients in hole-doped systems, and the minority spin carrier in electron-doped systems. The maximum spin Seebeck coefficient obtained was 1320 muV/K at 50 K, with a reduced but still significant value of 715 muV/K at 100 K.