Journal
ORGANIC ELECTRONICS
Volume 89, Issue -, Pages -Publisher
ELSEVIER
DOI: 10.1016/j.orgel.2020.106032
Keywords
Organic field-effect transistors (OFETs); Naphthalene diimide (NDI); n-type; Selenophene; Small molecules; Planarity
Funding
- National Research Foundation of Korea (NRF)
- Ministry of Science, ICT and Future Planning (MSIP) [2018R1A2A1A05078734, 2012M3A7B4049647]
- NRF - Korea government (MSIT) [NRF-2020R1A2C10089518]
- National R&D Program through the National Research Foundation of Korea (NRF) - Ministry of Science and ICT [2020M3F3A2A01085792]
- National Research Foundation of Korea [2020M3F3A2A01085792] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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Two NDI-based small molecules, N-TVT-N and N-SVS-N, were synthesized as the active materials for n-type OFETs. While N-SVS-N showed smoother and more uniform surface morphology with predominantly edge-on orientation, N-TVT-N exhibited lower electron mobility in the resulting thin films. These differences can be attributed to the structural features of N-SVS-N facilitating interactions between electron-rich selenophenes.
Two naphthalene diimide (NDI)-based small molecules, one with a thiophene-vinylene-thiophene linker donor unit (N-TVT-N) and the other with a selenophene-vinylene-selenophene linker donor unit (N-SVS-N), were newly synthesized for the purpose of serving as the active materials of n-type organic field-effect transistors (OFETs). We investigated the various characteristics of the synthesized small molecules to study how the type of donor unit would affect the charge transport of the resulting thin film. The monomeric molecular structure of N-SVS-N, i.e., that with selenium (Se) substituted for sulfur, was found to be tilted about twice as much as that of N-TVT-N, and to display lower backbone planarity. Unexpectedly, the thin films of N-SVS-N each showed a smoother and more uniform surface morphology and predominantly edge-on orientation in comparison with those of N-TVT-N. As the result, the optimally annealed OFETs containing N-SVS-N and N-TVT-N exhibited electron mobilities of up to 0.016 cm(2) V-1 s(-1) and 6.6 x 10(-3) cm(2) V-1 s(-1), respectively. These results could be explained by the structural features of N-SVS-N facilitating interactions between the electron-rich selenophenes.
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