4.6 Article

Hybrid III-V diamond photonic platform for quantum nodes based on neutral silicon vacancy centers in diamond

Journal

OPTICS EXPRESS
Volume 29, Issue 6, Pages 9174-9189

Publisher

OPTICAL SOC AMER
DOI: 10.1364/OE.418081

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Funding

  1. Air Force Office of Scientific Research [FA9550-17-0158, FA9550-18-1-0081]
  2. National Science Foundation [1640959]
  3. Defense Advanced Research Projects Agency [D18AP00047]
  4. Directorate For Engineering
  5. Emerging Frontiers & Multidisciplinary Activities [1640959] Funding Source: National Science Foundation

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The study describes a III-V diamond platform for SiV0 centers in diamond, enabling Purcell enhancement and frequency conversion through evanescent coupling. This heterogeneously integrated platform avoids the need for etching the diamond substrate and can be realized with readily available fabrication techniques.
Integrating atomic quantum memories based on color centers in diamond with on-chip photonic devices would enable entanglement distribution over long distances. However, efforts towards integration have been challenging because color centers can be highly sensitive to their environment, and their properties degrade in nanofabricated structures. Here, we describe a heterogeneously integrated, on-chip, III-V diamond platform designed for neutral silicon vacancy (SiV0) centers in diamond that circumvents the need for etching the diamond substrate. Through evanescent coupling to SiV0 centers near the surface of diamond, the platform will enable Purcell enhancement of SiV0 emission and efficient frequency conversion to the telecommunication C-band. The proposed structures can be realized with readily available fabrication techniques. (C) 2021 Optical Society of America under the terms of the OSA Open Access Publishing Agreement

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