4.6 Article

Hybrid dual-gain tunable integrated InP-Si3N4 external cavity laser

Journal

OPTICS EXPRESS
Volume 29, Issue 7, Pages 10958-10966

Publisher

Optica Publishing Group
DOI: 10.1364/OE.416398

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Funding

  1. National Key Research and Development Program of China [2019YFB2203200, 2019YFB1802903, 2018YFB2201702]
  2. National Natural Science Foundation of China [61705129, 61535006]
  3. Shanghai Municipal Science and Technology Major Project [2017SHZDZX03]
  4. Open Project Program of Wuhan National Laboratory for Optoelectronics [2019WNLOKF004]

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A hybrid dual-gain integrated external cavity laser with full C-band wavelength tunability is presented, using a Si3N4 photonic circuit to combine two reflective semiconductor optical amplifier gain channels. The integration of a Vernier ring filter in the circuit selects a single longitudinal mode and reduces the laser linewidth, resulting in higher output power and narrower linewidth compared to single gain operation. Promising for applications in optical communications and light detection and ranging systems.
We present a hybrid dual-gain integrated external cavity laser with full C-band wavelength tunability. Two parallel reflective semiconductor optical amplifier gain channels are combined by a Y-branch in the Si3N4 photonic circuit to increase the optical gain. A Vernier ring filter is integrated in the Si3N4 photonic circuit to select a single longitudinal mode and meanwhile reduce the laser linewidth. The side-mode suppression ratio is similar to 67 dB with a pump current of 75 mA. The linewidth of the unpackaged laser is 6.6 kHz under on-chip output power of 23.5 mW. The dual-gain operation of the laser gives higher output power and narrower linewidth compared to the single gain operation. It is promising for applications in optical communications and light detection and ranging systems. (C) 2021 Optical Society of America under the terms of the OSA Open Access Publishing Agreement

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