Fabricating and investigating high photoresponse UV photodetector based on Ni-doped ZnO nanostructures

In this study, pure (ZnO) and Ni-doped ZnO (ZnO: Ni) nanostructures with different concentrations of Ni (93:7, 95:5, 97:3 weight ratios) were successfully prepared by using thermal decomposition method. The structural, morphological, optical and optoelectronic properties of ZnO and ZnO: Ni were evaluated by XRD, FE-SEM, UV-Vis, I-V and I-t measurements. XRD results confirmed that Ni was successfully incorporated into the ZnO structure because all the samples had a single-phase hexagonal structure. Upon the incorporation of Ni into ZnO, the shape of the nanostructures changed from rod to spherical-like. UV-visible spectra the doped samples showed a blue shift compared to the pure sample. The UV photodetector based on ZnO and ZnO: Ni nanostructures with metal-semiconductor-metal (MSM) configuration structure was fabricated for the UV photodetector. The UV photodetector based on ZnO: Ni samples showed excellent photoresponse time compared to pure ZnO. The results indicated the sample doped with 7% Ni offered the highest response rate (the rise and decay time were 0.5 s and 2 s, respectively).

Automated summary

In this study, different concentrations of Ni-doped ZnO nanostructures were successfully prepared and evaluated. The incorporation of Ni into ZnO changed the shape of nanostructures and caused a blue shift in UV-visible spectra. UV photodetectors based on ZnO: Ni samples showed improved photoresponse time, with the sample doped with 7% Ni exhibiting the highest response rate.