Journal
OPTICAL MATERIALS
Volume 113, Issue -, Pages -Publisher
ELSEVIER
DOI: 10.1016/j.optmat.2021.110851
Keywords
Monolayer WS2; Electro-absorption modulator; Modulation depth; Modulation bandwidth
Categories
Funding
- National Key R&D Program of China [2019YFB2004904]
- Science and Technology Plan of Shanghai Administration for Market Regulation [2019-02]
- Key Research and Development Project of Shandong Province [2019GHY112072, 2019GHY112051]
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The study investigates a monolayer WS2 electro-absorption modulator on a GaN waveguide, which achieves a significant change in the effective mode index by altering the refractive index of WS2. The results demonstrate a high modulation bandwidth, modulation depth, and low insertion loss, making it useful for electro-optic modulator research with two-dimensional materials.
Monolayer WS2 electro-absorption modulator (EAM) on GaN waveguide is investigated. By covering monolayer WS2 on top of the optical waveguide and applying different voltages to change the refractive index of WS2, a strong interaction between monolayer WS2 and light is obtained, which leads to a significant change of the imaginary part of effective mode index (EMI) in the waveguide. A systematic and detailed discussion has been presented to describe and design the EAM. Results show that the EAM can achieve 153 GHz 3-dB modulation bandwidth, around 70% modulation depth and lower insertion loss with 10 mu m-long active region. These will be helpful for the study of two-dimensional material electro-optic modulator.
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