Journal
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
Volume 491, Issue -, Pages 52-58Publisher
ELSEVIER
DOI: 10.1016/j.nimb.2021.01.019
Keywords
SiC schottky barrier diode; Commercial device; Heavy Ions; Irradiation; Temperature dependence
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Funding
- National Key RD Plan [2017YFB0405702]
- National Natural Science Foundation of China [61704116, 11875068]
- fund of Innovation Center of Radiation Application [KFZC2020021001]
- Science and Technology on Analog Integrated Circuit Laboratory [6142802190505]
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The functionality of a commercial Schottky Barrier Diode (SBD) based on 4H-SiC in extreme temperature and radiation environments was assessed, revealing changes in electronic characteristics induced by radiation-caused defects.
The function of a commercial Schottky Barrier Diode (SBD) based on 4H-SiC in an environment of extreme temperature and radiation was assessed. The capacitance-voltage (C-V) and current-voltage (I-V) characteristics of the devices were measured by heavy ions (HIs) irradiation at 3 different fluences and 15 different nodes of temperature. From these measurements, the effective carrier concentration (N-D), reverse current (I-R), series resistance (R-S), ideal factor (n), and Schottky barrier height (SBH) were calculated and analyzed. Obvious increases of ND and IR were found and some changes of the electronic characteristics with temperature were enhanced by HIs. After the highest fluence of irradiation, the IR at low temperature (20 K) was even larger than the IR at room temperature, which was subjected to lower fluence of irradiation, suggesting risks for aerospace applications. These changes were attributed to defects both at the interface and in the body-substrate induced by irradiation.
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