Journal
NANOTECHNOLOGY
Volume 32, Issue 22, Pages -Publisher
IOP Publishing Ltd
DOI: 10.1088/1361-6528/abe895
Keywords
SnO; magnetic proximity effect; first-principles calculations; spin– orbital coupling; valleytronics
Funding
- National Natural Science Foundation of China [11804075, 11874013]
- Natural Science Foundation of Hebei Province of China [A2019202015]
- Foundation for the Top Talents in Universities in Hebei Province [SLRC2019024]
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Research shows that valley splitting can be activated in SnO through the magnetic proximity effect with EuBrO, making SnO a promising material for future valleytronics applications. This unique electronic structure in SnO/EuBrO has the potential to lead to the design of new spintronic devices with enhanced valley splitting.
Strong magnetic interfacial coupling in van der Waals heterostructures is important for designing novel electronic devices. Besides the most studied transition metal dichalcogenides (TMDCs) materials, we demonstrate that the valley splitting can be activated in two-dimensional tetragonal d(0) metal oxide, SnO, via the magnetic proximity effect by EuBrO. In SnO/EuBrO, the valley splitting of SnO can reach similar to 46 meV, which is comparable to many TMDCs and equivalent to an external magnetic field of 800 T. In addition, the valley splitting can be further enhanced by adjusting interlayer distance and applying uniaxial strains. A design principle of new spintronic device based on this unique electronic structure of SnO/EuBrO has been proposed. Our findings indicate that SnO is a promising material for future valleytronics applications.
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