Transition from elastic to plastic strain release in core-shell nanowires revealed by in-plane x-ray diffraction

We investigate the strain evolution and relaxation process as function of increasing lattice mismatch between the GaAs core and surrounding InxGa1-xAs shell in core-shell nanowire heterostructures grown on Si(111) substrates. The dimensions of the core and shell are kept _ constant whereas the indium concentration inside the shell is varied. Measuring the 22 (4) over bar and 2 (2) over bar0 in-plane Bragg reflections normal to the nanowire side edges and side facets, we observe a transition from elastic to plastic strain release for a shell indium content x > 0.5. Above the onset of plastic strain relaxation, indium rich mounds and an indium poor coherent shell grow simultaneously around the GaAs core. Mound formation was observed for indium contents x = 0.5 and 0.6 by scanning electron microscopy. Considering both the measured radial reflections and the axial 111 Bragg reflection, the 3D strain variation was extracted separately for the core and the InxGa1-xAs shell.

Automated summary

This study investigates the strain evolution and relaxation process between the GaAs core and surrounding InxGa1-xAs shell in core-shell nanowire heterostructures grown on Si(111) substrates as the lattice mismatch increases. It was found that a transition from elastic to plastic strain release occurs for a shell indium content x > 0.5, leading to the growth of indium-rich mounds and an indium-poor coherent shell around the GaAs core. Small mounds were observed for indium contents x = 0.5 and 0.6 by scanning electron microscopy.