Modify Cd3As2 nanowires with sulfur to fabricate self-powered NIR photodetectors with enhanced performance

Cd3As2 nanowires (NWs) have great potential in the near-infrared (NIR) photodetection field due to their excellent optoelectronic properties as a typical Dirac semimetal. However, the existence of surface oxidization limits their photoresponse performance for practical applications. Here, we modified the surface of Cd3As2 NWs with sulfur to prevent surface oxidizing and optimize the bandgap structure to improve the photoresponse performance. The S-modified Cd3As2 samples existed as core/shell Cd3As2/CdS NWs and the corresponding single NW device showed a responsivity of 0.95 A/W in the NIR band at a 0 V bias, which is three orders of magnitude higher than that of an unmodified NW. This study provides an efficient and universally applicable way to prevent semimetals nanostructures from oxidizing and promote their optoelectronic properties.

Automated summary

By surface modification of Cd3As2 NWs with sulfur, the oxidation of surface was prevented and bandgap structure was optimized to enhance the photoresponse performance. The S-modified Cd3As2 samples as core/shell Cd3As2/CdS NWs showed significantly improved responsivity in the NIR band.