Limiting current oxygen sensor based on Y, In co-doped SrTiO3 as a dense diffusion barrier layer

A novel dense diffusion barrier material (YxSr1-xTi0.9In0.1O3-delta (x = 0.03, 0.05, 0.07)) was prepared by using a sol-gel method. The crystal structure, microstructures, electrical conductivity and ionic conductivity of barrier material were characterized. The results show that the samples exhibit the formation of cubic perovskite structure phase. The increase of Y-doping amount on A-site improved electrical conductivity and sinterability of materials. A limiting current oxygen sensor based on Y0.07Sr0.97Ti0.9In0.1O3-delta as a dense diffusion barrier shows excellent sensing performance. The linear relationship between limiting current logI(L) and 1000/T can described logI(L) = 4.6038 - 3.8475 center dot 1000/T. At 750 degrees C, 0.25% <= x(O-2) <= 5.0%, the linear relationship between limiting current (I-L) and oxygen amount (x(O-2)) can described as I-L = 7.0476 + 3.8751 x(O-2).

Automated summary

A novel dense diffusion barrier material was prepared using a sol-gel method, showing excellent crystal structure and electrical conductivity. The Y-doping amount significantly affected the electrical conductivity and sinterability of the material. The limiting current oxygen sensor based on the dense diffusion barrier material showed excellent sensing performance.