Journal
NANO LETTERS
Volume 21, Issue 5, Pages 1928-1934Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acs.nanolett.0c03959
Keywords
field emission; vacuum electron; nanogap; GaN; field enhancement
Categories
Funding
- Laboratory Directed Research and Development program at Sandia National Laboratories
- U.S. Department of Energy's National Nuclear Security Administration [DE-NA-0003525]
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Top-down fabricated gallium nitride (GaN)-based nanoscale vacuum electron diodes exhibit record ultralow turn-on voltages and stable high field-emission currents, showing promise for high-performance and robust III-nitride-based vacuum nano-electronics applications.
The III-nitride semiconductors have many attractive properties for field-emission vacuum electronics, including high thermal and chemical stability, low electron affinity, and high breakdown fields. Here, we report top-down fabricated gallium nitride (GaN)-based nanoscale vacuum electron diodes operable in air, with record ultralow turn-on voltages down to similar to 0.24 V and stable high field-emission currents, tested up to several microamps for single-emitter devices. We leverage a scalable, top-down GaN nanofabrication method leading to damage-free and smooth surfaces. Gap-dependent and pressure-dependent studies provide new insights into the design of future, integrated nanogap vacuum electron devices. The results show promise for a new class of high-performance and robust, on-chip, III-nitride-based vacuum nano-electronics operable in air or reduced vacuum.
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