Disposable C_Spacer flow for building MIM capacitors

In this paper we will describe an innovative process flow to build a MIM capacitor, allowing to save several process steps but accounting for all the morphological requirements. The suggested flow is based on the deposition of a sacrificial layer during the top electrode patterning in a dry etching tool. This C-rich film is employed to form disposable spacers, which are requested to reduce the risk of electrical leakage. We will show how the film is deposited and controlled and the benefits given by the suggested sequence.

Automated summary

This paper presents an innovative process flow for building a MIM capacitor, which saves process steps and meets all morphological requirements. The flow involves depositing a sacrificial layer during top electrode patterning in a dry etching tool to form disposable spacers, reducing the risk of electrical leakage. The film deposition and control process and benefits of the suggested sequence are also discussed.