Journal
MICROELECTRONIC ENGINEERING
Volume 239, Issue -, Pages -Publisher
ELSEVIER
DOI: 10.1016/j.mee.2021.111531
Keywords
4H-SiC; Schottky barrier diode; High-temperature annealing; Thermal stability
Categories
Funding
- National Natural Science Foundation of China [61774052, 61904045]
- Science and Technology on Analog Integrated Circuit Laboratory [6142802180507]
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A Schottky diode using Mo-C alloy as the Schottky metal was proposed in this study, showing near-ideal behavior at high annealing temperatures. The electrical properties of the structure were analyzed at different annealing temperatures, and it was found to have good stability at high temperatures.
In this work, we propose a Schottky diode that uses Mo-C alloy as a Schottky metal to form a Schottky contact. Unlike existing diode designs based on Mo/4H-SiC, the design presented here shows near-ideal behavior at high annealing temperatures. The Schottky interface obtained was studied at different annealing temperatures, and the electrical properties were analyzed by temperature-dependent current and voltage (I-V) and capacitor voltage (C-V) measurements. When annealing at 900 degrees C, its ideality factor was 1.03 and the barrier height reached 1.16 eV. There was no significant change in the ideality factor and barrier height while analyzing the electrical characteristics at different test temperatures. These results show that the structure has good stability at high annealing temperatures. At the same time, the morphology of the metal-semiconductor interface was observed through a transmission electron microscope and combined with the analysis of electrical characteristics, and it can be concluded that the structure has high-temperature annealing stability.
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