Journal
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
Volume 123, Issue -, Pages -Publisher
ELSEVIER SCI LTD
DOI: 10.1016/j.mssp.2020.105546
Keywords
3D printing; Copper oxide; Semiconductor; Ammonia gas sensor; Fused deposition modeling
Categories
Funding
- Thailand Research Fund
- Kasetsart University Research and Development Institute from the National Research Council of Thailand (NRCT) through Mahidol University [RSA6180062]
- Science Achievement Scholarship of Thailand (SAST)
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A new room-temperature ammonia gas sensor based on n-type copper oxide was fabricated using 3D printing and sintering method. The sensor showed good repeatability, high stability, low humidity dependency, high sensitivity, and selectivity towards ammonia at room temperature. The sensing mechanism was proposed based on the resistance change via reaction on adsorbed surface oxygen species or direct electron transfer between ammonia molecules and CuO.
In this work, a new room-temperature ammonia gas sensor based on n-type copper oxide (CuO) semiconductor was fabricated by 3D printing with fused deposition modeling (FDM) technique and sintering method. The polylactic acid (PLA) was blended together with Cu particles and extruded into the filament form for FDM printing. The PLA/Cu composite was printed and calcined in a furnace to obtain semiconducting CuO. The structural characterization results of 3D printed sensor showed monoclinic CuO phase and scaffold structures, which provided active porous sites for enhanced gas adsorption and room-temperature gas-sensing performances. According to gas-sensing data, the 3D printed CuO gas sensor exhibited good repeatability, high stability (>3 months), low humidity dependency (25-65 %RH), high sensitivity and selectivity towards ammonia at room temperature. The sensor response increased linearly with increasing NH3 concentration from 25 to 200 ppm. The sensing mechanism of the 3D printed CuO sensor was proposed based on the resistance change via reaction on adsorbed surface oxygen species or direct electron transfer between ammonia molecules and CuO. This approach could open up new ways to fabricate semiconductor gas sensors with controllable sizes and shapes for future gassensing applications.
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