Mapping vapor - solid distributions of silicon germanium chemical vapor depositions

A Thermodynamic analysis of Si1-xGex Chemical Vapor Deposition via SiH4 and GeH4 was conducted for a complete determination of the Vapor - Solid distribution of Ge mole fraction. Explicit Vapor - Solid distributions are achieved after an empirical adjustment of the Gibbs Free Energy of reactions. The chemical reaction behind the adjusted values are not clearly identified, but thermodynamic control of the elemental ratio of the deposited films is definitely demonstrated. Only three numbers are needed to achieve full knowledge of a distribution, the Gibbs Free Energy of reactions for the deposition of each element and the regular solution interaction parameter. The underlying laws necessary for the comprehension of semiconductor Vapor - Solid Distributions are thus completely known, and the only difficulty lays in the determination of the Gibb Free Energy of reactions needed for the successful mapping of the distribution.

Automated summary

Thermodynamic analysis of Si1-xGex Chemical Vapor Deposition via SiH4 and GeH4 revealed explicit Vapor - Solid distributions after empirical adjustment of the Gibbs Free Energy of reactions. The chemical reaction behind the adjusted values is unclear, but the thermodynamic control of the elemental ratio of the deposited films is demonstrated. Only three numbers are needed for full knowledge of a distribution, highlighting the importance of the Gibbs Free Energy of reactions and the regular solution interaction parameter.