The growth of HVPE α-Ga2O3 crystals and its solar-blind UV photodetector applications

While Ga2O3 crystals are considered as the next generation optoelectronic materials, the exploration of HVPE alpha-Ga2O3 crystals and their use as solar-blind UV photodetector are still insufficient. In this paper, we investigated the structural characterization of HVPE alpha-Ga2O3 materials and their properties as solar-blind photodetector. HVPE alpha-Ga2O3 exhibited excellent structural properties with relatively good crystallinity, and smooth surface morphology, without any complicated process. Raman investigations confirmed the existence of slight compressive strain in the as-grown HVPE alpha-Ga2O3. UV-visible spectrophotometry proved that HVPE alpha-Ga2O3 had an optical bandgap of 5.15 eV, evidencing the suitability of this material for application as solar-blind photo detector. Furthermore, the photo-detector synthesized using HVPE alpha-Ga2O3 showed excellent photo-response characteristics. We believe that this study will support further development of functional oxide semiconductor materials and opto-electronic devices.

Automated summary

This study investigated the structural characterization and properties of HVPE alpha-Ga2O3 materials as solar-blind UV photodetectors. The results showed excellent structural properties and optical bandgap of 5.15 eV, making it suitable for solar-blind photodetector applications. Photo-detectors synthesized using HVPE alpha-Ga2O3 exhibited excellent photo-response characteristics, supporting further development of functional oxide semiconductor materials and opto-electronic devices.