Journal
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
Volume 123, Issue -, Pages -Publisher
ELSEVIER SCI LTD
DOI: 10.1016/j.mssp.2020.105534
Keywords
alpha-Ga2O3; Etch pit; Halide vapor epitaxy; Wet etch
Categories
Funding
- National Research Foundation of Korea (NRF) - Korea government (MSIT) [2020R1A4A4078674]
- Korea Basic Science Institute [C070300]
- National Research Foundation of Korea [2020R1A4A4078674] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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This study investigates the structural characterization of HVPE alpha-Ga2O3 materials via alkali KOH solution etching, revealing triangular-shaped etch pits caused by the propagation of threading dislocations. The activation energy of the etch rate for the materials, etch pit, and surface roughness after wet chemical treatment have been examined, providing insights into the structural behavior of alpha-Ga2O3 crystals during wet chemical etching.
While the importance of alpha-Ga2O3 crystals is increasingly gaining much interest, the structural behavior of halide vapor phase epitaxy (HVPE) alpha-Ga2O3 crystals in wet chemical etching has not been explored yet. In this study, we investigate the structural characterization of HVPE alpha-Ga2O3 materials via alkali KOH solution etching. Further, the activation energy of the etch rate for the materials, etch pit, and surface roughness after wet chemical treatment have been examined. The cross-sectional TEM analysis demonstrates that the triangular-shaped etch pits with (11 (2) over bar 6) plane are caused by the propagation of threading dislocations in the HVPE alpha-Ga2O3 crystals.
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