Crystalline properties of ε-Ga2O3 film grown on c-sapphire by MOCVD and solar-blind ultraviolet photodetector

Heterogeneous epitaxy of epsilon-Ga2O3 films on c-plane sapphire was carried out by metal-organic chemical vapor deposition. The crystal quality and epitaxial relationship were investigated by X-ray diffraction and transmission electron microscopy. The effects of the thickness changing on crystal quality and morphology of epsilon-Ga2O3 films were analyzed. A higher quality epsilon-Ga2O3 film with full width at half maxima of 0.46 degrees was obtained at 480 nm. A epsilon-Ga2O3 metal-semiconductor-metal solar blind ultraviolet photodetector with large on/off ratio of over 2 x 10(3), peak responsivity of 146 A/W and detectivity of 1.2 x 10(13) Jones was fabricated, indicating good optical properties of the epsilon-Ga2O3 film.

Automated summary

Heterogeneous epitaxy of epsilon-Ga2O3 films on c-plane sapphire was conducted by metal-organic chemical vapor deposition method. The effects of thickness on crystal quality and morphology of epsilon-Ga2O3 films were analyzed. A high-quality epsilon-Ga2O3 film with good optical properties was obtained.