Growth of In2S3 nanolayers on F-Mica, SiO2, ZnO, and TiO2 substrates using chemical vapor deposition

In this study, 2D layers of beta-In(2)S(3 )have been synthesized on different substrates such as SiO2, F-Mica, ZnO, and TiO2 using the chemical vapor deposition (CVD) technique. Different morphologies of In2S3 2D nanoflakes have been obtained within the temperature range of 550-850 degrees C. These nanolayers have been characterized by using FESEM, XRD, and Raman spectroscopy techniques. The results show well-formed nanodomains of beta-In(2)S(3 )with a tetragonal phase on different substrates by CVD technique at an optimized temperature of 750 degrees C, although the morphology of the grown layer depending sensitively upon the substrates. The initial results show ohmic current-voltage characteristics, the fast photoconductive response of In2S3 layers. In2S3 grown on ZnO substrates as a base layer show enhanced photoelectrochemical properties because of increased visible light absorption, as indicated by optical absorption results.

Automated summary

2D layers of beta-In2S3 were synthesized on different substrates using the CVD technique, with varying morphologies of In2S3 2D nanoflakes observed. In2S3 grown on ZnO substrates exhibited enhanced photoelectrochemical properties due to increased visible light absorption.