4.6 Article

Theoretical study on photoemission performance of field assisted GaAs nanowire photocathode

Journal

MATERIALS LETTERS
Volume 287, Issue -, Pages -

Publisher

ELSEVIER
DOI: 10.1016/j.matlet.2020.129284

Keywords

Semiconductors; Simulation and modeling; Thin film

Funding

  1. Qing Lan Project of Jiangsu Province-China [2017-AD41779]
  2. Six Talent Peaks Project in Jiangsu Province-China [2015-XCL-008]

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By adding an external electric field to control the motion trajectory of electrons in GaAs nanowire structures, the emission efficiency of the photocathode can be improved. The quantum efficiency was calculated under different geometric parameters, showing that a certain intensity of electric field can enhance photoelectric emission.
In order to solve the problem that electrons in GaAs nanowire structure are difficult to escape and collect, we propose that the motion trajectory of electrons in the nanowire structure can be controlled by adding an external electric field, so as to improve the emission efficiency of photocathode. We calculate the quantum efficiency under different geometric parameters, the results show that a certain intensity of electric field can improve the photoelectric emission. (C) 2021 Elsevier B.V. All rights reserved.

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