Wafer scale epitaxial germanium on silicon (001) using pulsed laser annealing

Pulsed Nd:YAG (1064 nm) laser was used to crystallize amorphous germanium thin-films on silicon (001) wafer to get epitaxial Ge. Film thickness and laser fluence played a crucial role. Thicker films (>= 300 nm) are polycrystalline while thinner films are epitaxial. Rocking curve measurements show improvement in crystallinity with increase in laser fluence. The full 2-in. laser crystallized wafer has omega scan of 0.20 degrees and implied threading dislocation density of 6 x 10(8) cm(-2). Hence, a fast, costeffective, and low thermal budget process is used to achieve epitaxial Ge on Si for large area applications. (c) 2020 Elsevier B.V. All rights reserved.

Automated summary

The pulsed Nd:YAG laser was used to crystallize amorphous germanium thin-films, resulting in epitaxial Ge, with film thickness and laser fluence playing a crucial role. The epitaxial Ge preparation method is fast, cost-effective, and has a low thermal budget, making it suitable for large area applications.