Journal
MATERIALS LETTERS
Volume 285, Issue -, Pages -Publisher
ELSEVIER
DOI: 10.1016/j.matlet.2020.129174
Keywords
Thin films; Semiconductors; Optical materials and properties; Electrical properties; Sensors
Funding
- Deanship of Scientific Research at King Khalid University, Abha, Saudi Arabia [R.G.P.1/216/41]
- Deanship of Scientific Research at Princess Nourah bint Abdulrahman University
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Terbium doping enhances the photodetection properties of Ag/CdS/Ag devices, improving sensitivity, responsivity, detectivity, and response time compared to pure CdS devices. The change in conduction mechanism from Schottky to ohmic is responsible for the enhanced performance.
Herein, the effect of Terbium (Tb) doping on the photodetection properties of Ag/CdS/Ag devices have been elucidated. An enhancement in the photodetector performance was noted for Ag/Tb@CdS/Ag device in terms of amplified sensitivity of 592, improved responsivity of 3.64 A/W, and excellent detectivity of 6.39 x 10(12) Jones in compared to pure Ag/CdS/Ag device with respective values of 192, 0.24 A/W and 7.98 x 10(11) Jones. Moreover, the Tb-doped device exhibits a faster response time of 30 ms as compared to 421 ms for device with pure CdS. The enhancement in photodetector performance was explained through the change in conduction mechanism from Schottky in Ag/CdS/Ag to ohmic in Ag/Tb@CdS/Ag device. (c) 2020 Elsevier B.V. All rights reserved.
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