Preferential growth of specific crystal planes based on the dimension control of single crystal SnO2 nanobelts

In this paper, we have proposed a new crystal plane control technique of single crystal SnO2 nanobelts by thermal sublimation. The synthesis pressure was found to drastically influence the dimension of the cross-sectional aspect ratio (width-thickness) of the nanobelts. The pressure changed the surface free energy that contributes to the preferential growth of crystal planes of the nanobelt. The aspect ratio range of 1.2 to 7.39 for the nanobelts was achieved solely owing to the pressure variation. Also, as a catalyst style on the synthesis by thermal sublimation, the dispersed Au nanoparticles assisted the formation of uniform SnO2 nanobelts. (c) 2020 Elsevier B.V. All rights reserved.

Automated summary

This paper introduces a new technique for crystal plane control of single crystal SnO2 nanobelts by thermal sublimation, where synthesis pressure was found to significantly impact the cross-sectional aspect ratio of the nanobelts. Pressure influenced the surface free energy, leading to preferential growth of crystal planes. The aspect ratio range of nanobelts from 1.2 to 7.39 was achieved solely due to pressure variation, with dispersed Au nanoparticles acting as catalysts for the formation of uniform SnO2 nanobelts.