Journal
MATERIALS LETTERS
Volume 284, Issue -, Pages -Publisher
ELSEVIER
DOI: 10.1016/j.matlet.2020.128998
Keywords
Bioelectronic interface; GFET; Lipid bilayer formation; Silicon dioxide encapsulation; Atomic force microscopy; Epitaxial growth
Funding
- Scientific and Technological Research Council of Turkey, TUBITAK [117F243]
- Izmir Institute of Technology Scientific Research Project [2019-IYTE-291]
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This study presents a lipid bilayer-based sensor interface on SiO2 encapsulated graphene field effect transistors (GFET). The pH sensitivity of wrinkled interfaced-GFETs was found to be ten fold larger than the flat ones, attributed to thinning of the oxide layer by formation of wrinkles facilitating electrostatic gating on graphene.
This study describes lipid bilayer-based sensor interface on SiO2 encapsulated graphene field effect transistors (GFET). The SiO2 layer was utilized as a lipid compatible surface that drives bilayer formation. The two types of surface morphologies i) wrinkled morphology by thermal evaporation (TE) and ii) flat morphology by pulsed electron deposition (PED) were obtained. The sensing performance of wrinkled and flat interfaced-GFETs were investigated, pH sensitivity of wrinkled interfaced-GFETs were found to be ten fold larger than the flat ones. The enhanced sensitivity is attributed to thinning of the oxide layer by formation of wrinkles thereby facilitating electrostatic gating on graphene. We foresee that described wrinkled SiO2 interfaced-GFET holds promise as a cell membrane mimicking sensing platform for novel bioelectronic applications. (c) 2020 Published by Elsevier B.V.
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