Characterization of Zn in a polycrystalline MgO film

Oxides can be utilized in various industries. They are frequently doped with other cations to improve some key properties. Although doping is common, the doping mechanism related to transport of doped metallic cations in the oxide grain on the atomic scale still needs to be clarified. Here, with MgO as a prototype, Zn cations in a polycrystalline MgO film was investigated utilizing microstructure observation and chemical composition analyses. Results show that although there are various defects such as vacancies, dislocations, voids, grain boundaries and impurity ions in the polycrystalline MgO film, a Zn cation could penetrate the overall polycrystalline MgO film. Although a Zn cation move relative randomly in an individual MgO grain, as there is a constant source and a constant sink for Zn located at opposite sides of the MgO film, the Zn cation could move directionally on a relatively macro scale from the source to the sink.

Automated summary

This study investigated the transport mechanism of Zn cations in a polycrystalline MgO film, finding that despite the presence of various defects, Zn cations can penetrate the entire film. Additionally, while Zn cations move randomly within individual MgO grains, they can move directionally on a macro scale from a constant source to a constant sink located on opposite sides of the film.