Computational thermodynamic study of SiC chemical vapor deposition from MTS-H2*

This study focuses on the computational thermodynamic analysis of the chemical vapor deposition (CVD) of SiC from the methyltrichlorosilane-hydrogen (MTS-H-2) using up-to-date thermodynamic databases. High-resolution computation has been performed with the fine intervals of temperature and pressure at the various H-2/MTS ratios of interest to systematically investigate the deposition condition range (800 to 1600 degrees C, 0 to 26 664 Pa, and H-2/MTS ratios of 0.1 to 100) to guide experimental exploration. The influence of deposition parameters on the compositions and phase stabilities of the deposit and gas phase pertinent to vapor processing is elucidated. Low pressure and medium temperatures (1000 to 1400 degrees C) are beneficial to reaching a higher SiC deposition efficiency and provide an optimal window for preparing a high-purity (>99 wt.% SiC) deposit. This optimal processing window expands significantly with an increasing H-2/MTS ratio (<20). These results are supported by a number of previous theoretical and experimental observations. The mass fraction of SiC in deposit is proposed as an additional perspective to understand the discrepancy between thermodynamic calculation and experimental observation of pure CVD SiC at low H-2/MTS ratios.

Automated summary

This study focuses on the computational thermodynamic analysis of SiC chemical vapor deposition, revealing that low pressure and medium temperatures are beneficial for efficiently depositing high-purity SiC.