Investigation of interface states between GaAs and Si3N4 after He+ implantation

The cross-sectional morphology of GaAs/Si3N4/SiO2 composite wafer after He+ implantation has been systematically observed. Experiment sample is prepared by focused ion beam system to meet the observation requirements of transmission electron microscope. The results show that implantation of 300 keV, 5 x 10(16)/cm(2) He+ gives rise to formation of bubbles and dislocations in GaAs material, but no cracks are observed. In addition, after annealing, interface separation and micro-gap appear at the interface between GaAs layer and Si3N4 layer. Finally, the mechanisms of bond fracture and blisters formation at the interface are explained by density function theory calculation.

Automated summary

The cross-sectional morphology of GaAs/Si3N4/SiO2 composite wafer after He+ implantation was systematically observed, revealing the formation of bubbles and dislocations in the GaAs material, as well as interface separation and micro-gap after annealing. These observations were explained by density function theory calculations.