Controlling transport properties at LaFeO3/SrTiO3 interfaces by defect engineering

The formation of conductive LaFeO3/SrTiO3 interfaces is first time reported by pulsed laser deposition via controlling the defects of SrTiO3, which are closely related to the surface of substrate. It is found that the interfaces grown on SrTiO3 substrates without terraces exhibit the two dimensional electron gas. Moreover, the conductive interfaces show a resistance upturn at low temperatures which is strongly diminished by light irradiation. These interfaces favor the persistent photoconductivity, and the enormous value of relative change in resistance, about 60 185.8%, is also obtained at 20 K. The experimental results provide fundamental insights into controlling the defects at conductive interfaces of oxides and paving a way for complex-oxides based optoelectronic devices.

Automated summary

The formation of conductive LaFeO3/SrTiO3 interfaces was reported for the first time by controlling defects in SrTiO3, leading to the growth of a two-dimensional electron gas. These conductive interfaces exhibit a resistance upturn at low temperatures, which can be significantly diminished by light irradiation, showing persistent photoconductivity. The relative change in resistance is found to be as high as 60 to 185.8% at 20 K, providing insights into defect control in oxide interfaces for optoelectronic devices.