Zinc oxide incorporated indium tungsten oxide amorphous thin films for thin film transistors applications

Zinc oxide (ZnO), indium tungsten oxide (IWO), and ZnO incorporated indium tungsten oxide (ZIWO) thin films (thickness similar to 10 nm) have been fabricated at room temperature by radio-frequency (RF) magnetron sputtering to study their physical and chemical properties for development of high performance and stable thin film transistors. The study reveals that ZnO incorporation with IWO resulted amorphous, smooth and better quality of thin films in comparison to the zinc oxide and indium tungsten oxide. Furthermore, the fabricated ZIWO thin film transistor exhibits a good device performance with field-effect mobility (mu(FE)) of 26.80 cm(2)/Vs, threshold voltage (Vth) of 0.62 V, sub-threshold swing (SS) of 0.39 V/decade, and positive biased stress shifting (Delta Vth) of +0.82 V than the IWO (conducting in nature) and ZnO (mu(FE )similar to 1.95 cm 2 /Vs, Vth similar to 14.40 V, SS similar to 1.68 V/decade, Delta Vth of +4.20 V) TFTs counterparts.

Automated summary

ZIWO thin film transistors fabricated by RF magnetron sputtering exhibit better device performance compared to IWO and ZnO counterparts.