Deep Etching of LiNbO3 Using Inductively Coupled Plasma in SF6-Based Gas Mixture

This work is an extensive study of the plasma chemical etching (PCE) process of single-crystalline lithium niobate (LiNbO3) in the SF6/O-2 based inductively coupled plasma (ICP). The influence of the main technological parameters of the LiNbO3 PCE process, including the distance between the sample and the lower edge of the discharge chamber, as well as the temperature of the substrate holder on the etching process rate, has been studied. It was shown that changing the temperature of the substrate holder in the range from 100 to 200 degrees C leads to a gradual rise of the etching rate from 127 to 282 nm/min. A further increase in the temperature to 250 degrees C results in a sharp increase in the etching rate to 711 nm/min. The maximum achieved etching rate in experimental series which were aimed at determining the dependence of the LiNbO3 etching rate on the temperature of the substrate holder was 812 nm/min at a substrate holder temperature of 325 degrees C. With the help of X-ray photoelectron spectroscopy (XPS) technique was found and shown that during the etching process in fluorinated plasma the nonvolatile LiF compound is formed on the surface of the treated LiNbO3. On the basis of the obtained results, the optimal process of deep (>80 mu m) LiNbO3 PCE was developed, with an etched wall inclination angle of approximate to 110 degrees, with selectivity ratio to Cr mask of approximate to 20, and an etching rate of about 300 nm/min.

Automated summary

This extensive study investigated the plasma chemical etching process of single-crystalline lithium niobate in SF6/O-2 based inductively coupled plasma. The research revealed that the temperature of the substrate holder significantly affects the etching rate. X-ray photoelectron spectroscopy technique identified the formation of nonvolatile LiF compound on the surface during the etching process. An optimal process for deep etching of LiNbO3 was developed based on the obtained results.