Complex dielectric permittivity, electric modulus and electrical conductivity analysis of Au/Si3N4/p-GaAs (MOS) capacitor

RF magnetron sputtering was used to grow silicon nitride (Si3N4) thin film on GaAs substrate to form metal-oxide-semiconductor (MOS) capacitor. Complex dielectric permittivity (epsilon*), complex electric modulus (M*) and complex electrical conductivity (sigma*) of the prepared Au/Si3N4/p-GaAs (MOS) capacitor were studied in detail. These parameters were calculated using admittance measurements performed in the range of 150 K-350 K and 50 kHz-1 MHz. It is found that the dielectric constant (epsilon ') and dielectric loss (epsilon '') value decrease with increasing frequency. However, as the temperature increases, the epsilon ' and epsilon '' increased. Ac conductivity (sigma(ac)) was increased with increasing both temperature and frequency. The activation energy (E-a) was determined by Arrhenius equation. Besides, the frequency dependence of sigma(ac) was analyzed by Jonscher's universal power law (sigma(ac) = A omega(s)). Thus, the value of the frequency exponent (s) were determined.

Automated summary

RF magnetron sputtering was used to grow silicon nitride thin film on GaAs substrate to form metal-oxide-semiconductor capacitor. The complex dielectric permittivity, complex electric modulus, and complex electrical conductivity of the prepared capacitor were studied in detail. The dielectric constant and loss decreased with increasing frequency, while increased with temperature, and the ac conductivity increased with both temperature and frequency. Activation energy was determined by Arrhenius equation, and the frequency dependence of ac conductivity was analyzed, providing the value of the frequency exponent.