The influence of growth interruption on the luminescence properties of Ga (As,Sb)-based type II heterostructures

The influence of growth interruption on the luminescence properties of the Ga(As,Sb)/GaAs interface have been studied by continous wave and time resolved photoluminescence spectrosocopy in type II Ga(As,Sb)/GaAs/(Ga, In)As double quantum well structures. A specific highly selective etching technique in combination with atomic force microscopy (AFM) is used to analyze the morphology of the Ga(As,Sb) interface layers. The type II charge transfer recombination has been used as sensitive probe. It was found, that highest luminescence quantum efficiency can be achieved using a 10s growth interruption applying a stabilization using both precursor sources for the anion sublattice.

Automated summary

The study investigated the influence of growth interruption on the luminescence properties of the Ga(As,Sb)/GaAs interface in type II Ga(As,Sb)/GaAs/(Ga, In)As double quantum well structures. The morphology of the interface layers was analyzed using a highly selective etching technique in combination with atomic force microscopy (AFM), with type II charge transfer recombination used as a sensitive probe. The highest luminescence quantum efficiency was achieved with a 10-second growth interruption and stabilization using both precursor sources for the anion sublattice.