Hot exciton relaxation in coupled ultra-thin CdTe/ZnTe quantum well structures

The photoluminescence (PL) and PL excitation (PLE) spectra of CdTe/ZnTe asymmetric double quantum well (QW) structures are studied on a series of samples containing two CdTe layers with nominal thicknesses of 2 and 4 monolayers (ML) in the ZnTe matrix. The samples differ in the thickness of the ZnTe spacer between CdTe QWs which is 45, 65 and 75 ML. It has been found that at above-barrier excitation the PL from a shallow QW at sufficiently weak excitation intensities is determined by recombination of hot excitons. It is shown that under these conditions, when PL is excited by lasers with different wavelengths, the ratio of the PL intensities from shallow and deep QWs decreases exponentially with an increase of the initial kinetic energy of hot excitons. It is found that energy relaxation of hot excitons with LO phonon emission determine the shape of the PLE spectrum of shallow QW in the range of exciton kinetic energies up to more than 20 LO phonons above ZnTe bandgap. We have shown that the results obtained are well described by the model of charge and energy transfer between QWs.

Automated summary

The study investigates the photoluminescence and photoluminescence excitation spectra of CdTe/ZnTe asymmetric double quantum well structures containing different CdTe layer thicknesses and ZnTe spacer thicknesses. It was found that the recombination of hot excitons determined the photoluminescence characteristics of shallow quantum wells, while energy relaxation of hot excitons with LO phonon emission shaped the excitation spectra of shallow quantum wells. The results were well described by the model of charge and energy transfer between quantum wells.