4.7 Article Proceedings Paper

High-Speed Modulator With Integrated Termination Resistor Based on Hybrid Silicon and Lithium Niobate Platform

Journal

JOURNAL OF LIGHTWAVE TECHNOLOGY
Volume 39, Issue 4, Pages 1108-1115

Publisher

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JLT.2020.3032786

Keywords

Silicon; Electrooptical waveguides; Electrooptic modulators; Optical imaging; Resistors; Electrooptic modulators; hybrid silicon photonics; Integrated photonics; lithium niobate; optical communication

Funding

  1. National Key R&D Program of China [2019YFB1803900]
  2. National Natural Science Foundation of China [11690031, 11761131001]
  3. Guangzhou Science and Technology Program [201707010096]
  4. Key R&D Program of Guangdong Province [2018B030329001]
  5. Local Innovative and Research Teams Project of Guangdong Pearl River Talents Program [2017BT01X121]
  6. Innovation Fund of WNLO [2018WNLOKF010]
  7. Key-Area Research and Development Program of Guangdong Province [2019B121204003]
  8. Project of Key Laboratory of Radar Imaging and Microwave Photonics, Ministry of Education [RIMP2019003]
  9. State Key Laboratory of Optoelectronic Materials and Technologies of China, SunYat-senUniversity [OEMT-2018-KF-04]

Ask authors/readers for more resources

The hybrid Silicon and Lithium Niobate photonic integration platform combines the scalability of silicon photonics with the high modulation performance of Lithium Niobate, demonstrating high electro-optical bandwidth, low modulation voltage, and low optical insertion loss. It enables modulation rates up to 100 Gbit/s with excellent performance, providing a promising platform for future high-performance complex optical modulators.
Hybrid Silicon and Lithium Niobate photonic integration platform has emerged as a promising candidate to combine the scalability of silicon photonic with the high modulation performance of Lithium Niobate. Here, we report a hybrid Silicon and Lithium Niobate Mach-Zehnder modulator integrated with a thermal-optical bias controller and an on-chip RF terminator. The device demonstrates high electro-optical bandwidth of up to 60 GHz, low half-wave voltage of 2.25 V, and low optical on-chip loss of 2 dB, DC biasing half-wave voltage of 1.93 V (or biasing power of 23.77 mW), with reliable and stable biasing characteristics. On-off keying modulation up to 100 Gbit/s and four-level pulse amplitude modulation up to 120 Gbit/s has been demonstrated with excellent performance. The scheme, with its low modulation voltage, low biasing power consumption, low optical insertion loss, large bandwidth, and its flexibility and simplicity of designing, packaging, and testing, can provide an excellent platform on which future high performance complex optical modulators can be developed.

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