Vapor - Solid distribution of silicon germanium chemical vapor deposition determined with classical thermodynamics

Chemical Vapor Deposition delivers an atomic element into a solid phase via a gas phase. In such context, knowledge of the vapor - solid distribution of the elements is key. But CVD is a notorious non-equilibrium process. Notwithstanding the non-equilibrium, an analysis of silicon germanium chemical vapor deposition, via silane and germane, is conducted with classical thermodynamics for a complete determination of the vapor solid distribution. And a theory assuming a heterogeneous chemical equilibrium is developed. The knowledge of two linear functions is enough for accessing a distribution which is then determined over the full range of composition, without any major difficulty. Reduced pressure chemical vapor deposition and ultra-high vacuum chemical vapor deposition vapor - solid distributions are also reconciled within the same conceptual framework. The impact of the pressure, and of silicon precursors are neatly clarified. The underlying laws necessary for the determination of Si1-xGex vapor - solid distributions are thus completely known. VS distributions of binary alloys such as Si:B, Si:P and Ge1-xSnx, are also inferred to experience similar chemical equilibria.

Automated summary

Chemical Vapor Deposition introduces atomic elements into solid materials via a gas phase, with knowledge of the vapor-solid distribution being crucial. Despite being a non-equilibrium process, analysis of the silicon germanium CVD shows the development of a theory on heterogeneous chemical equilibrium. The laws necessary for determining vapor-solid distributions of Si1-xGex and other binary alloys are now fully understood.