Journal
JOURNAL OF CRYSTAL GROWTH
Volume 557, Issue -, Pages -Publisher
ELSEVIER
DOI: 10.1016/j.jcrysgro.2020.125996
Keywords
Ge1-xSnx alloy; Molecular beam epitaxy; Strain; Bandgap
Funding
- National Key R&D Program of China [2018YF.A200, 2017YFA0303702]
- National Natural Science Foundation of China [51732006, 11890702, 51721001, 51702153]
- Jiangsu Entrepreneurship and Innovation Program
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The study found that Ge1-xSnx alloy films are highly strained even after Sn segregation, and increasing the Sn composition shrinks the bandgap of Ge1-xSnx. Low growth temperatures and high growth rates are beneficial for achieving higher Sn compositions, while strain plays an important role in limiting Sn incorporation.
We have grown a series of Ge1-xSnx films with high Sn compositions up to 16.6% directly on Ge (100) substrates using molecular beam epitaxy (MBE). Reciprocal space mapping (RSM) study shows that all the Ge1-xSnx alloy films are highly strained even after Sn segregation has occurred. Ellipsometry measurements confirm that increasing the Sn composition shrinks the bandgap of Ge1-xSnx. We have found that low growth temperatures and high growth rates are beneficial to achieve higher Sn compositions, and strain is an important role in limiting the Sn incorporation.
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