4.4 Article

Novel sol-gel method for low temperature synthesis of nanostructured Mn3O4: Structure, cation valence states, optical and electrical properties

Journal

JOURNAL OF CRYSTAL GROWTH
Volume 555, Issue -, Pages -

Publisher

ELSEVIER
DOI: 10.1016/j.jcrysgro.2020.125961

Keywords

Nanostructures; Inorganic compounds; Nanomaterils; Oxides; Semiconducting materials

Funding

  1. University of Kerala
  2. Kerala State Council for Science Technology and Environment (KSCSTE) [KSCSTE SARD/003/2016]

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The report describes a novel low temperature sol-gel method for synthesizing nanostructured Hausmannite, Mn3O4, with very small crystallite size and high phase purity. Analysis using Raman and XPS confirms the presence of Mn in a +4 valence state and the purity of the phase. UV-visible absorption spectra show broad charge transitions associated with different Mn valence states, while DC electrical conductivity is significantly higher compared to single crystalline Mn3O4.
Novel low temperature sol-gel route for the synthesis nanostructured Hausmannite, Mn3O4 with very small crystallite size (9 +/- 1 nm) and phase purity is reported. Reaction temperature of 0-5 degrees C and drying temperature of 40 degrees C is the lowest reported so far. Average particle size (8 +/- 1 nm) measured from Transmission Electron Microscopy is in good agreement with the crystallite size indicating monodispersed nature. Raman analysis indicates the presence of +4 valence states for Mn over and above +2 and +3 and the presence of an Mn2O3 like surface layer. XPS analysis confirms the phase purity as well as the presence of Mn4+ ions. Presence of +4 valence state for Mn is attributed to the presence of cation vacancies that lead to disproportionate reactions. UV-visible absorption spectra is quite broad with charge transitions associated with Mn2+, Mn3+ and Mn4+ states and d-d crystal field transitions. DC electrical conductivity is about two orders of magnitude higher than that of single crystalline Mn3O4 and the conduction mechanism is defect dependent.

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