Journal
JOURNAL OF ALLOYS AND COMPOUNDS
Volume 855, Issue -, Pages -Publisher
ELSEVIER SCIENCE SA
DOI: 10.1016/j.jallcom.2020.157192
Keywords
Interfacial effect; Uniaxial magnetic anisotropy; Schottky barrier
Categories
Funding
- National Key Research and Development Program of China, China [2017YFA0204800]
- NSFC, China [52071079, 51571062, 11504047, 51971109, 51771053]
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The interfacial effect of amorphous cobalt-iron-boron films deposited on GaAs(001) by DC magnetron-sputtering was precisely studied. It was found that in the Co60Fe20B20/GaAs heterostructure, in-plane uniaxial magnetic anisotropy is a significant magnetic property and a magnetic Schottky barrier contact has been achieved through current-voltage characteristics at the interface.
Interfacial effect of amorphous cobalt-iron-boron (Co60Fe20B20) films deposited on GaAs(001) by DC magnetron-sputtering has been precisely studied. In-plane uniaxial magnetic anisotropy (UMA) as a significant magnetic property has been found in Co60Fe20B20/GaAs heterostructure and the UMA field (H-u) of (similar to 75 Oe) is achieved. Magnetic Schottky barrier contact has been achieved by current-voltage (I -V) characteristic through the interface with a barrier height of 0.72 eV, which is an appropriate for tunneling injection of spin current from ferromagnet to semiconductors in spin-injection devices. (C) 2020 Elsevier B.V. All rights reserved.
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