Thermodynamic and experimental studies of β-Ga2O3 growth by metalorganic vapor phase epitaxy

Thermodynamic analysis and experimental demonstration of beta-Ga2O3 growth by metalorganic vapor phase epitaxy using triethylgallium (TEG) and oxygen (O-2) precursors were performed. Thermodynamic analysis revealed that the O-2 supplied is preferentially used for the combustion of hydrocarbons and H-2 derived from TEG. Therefore, the use of high growth temperatures and high input VI/III ratios is essential for the complete combustion of hydrocarbons and H-2, and beta-Ga2O3 growth. The use of an inert gas as the carrier gas was also determined as necessary to grow beta-Ga2O3 at high temperatures. Based on these results, a ((2) over bar 01) oriented smooth beta-Ga2O3 layer could be grown on a c-plane sapphire substrate at 900 degrees C with a growth rate of 1.4 mu m h(-1) at an input VI/III ratio of 100. The grown layer showed a clear optical bandgap of 4.84 eV, and impurity concentrations of hydrogen and carbon were below the background levels of the measurement system. (C) 2021 The Japan Society of Applied Physics

Automated summary

Thermodynamic analysis and experimental demonstration were performed on the growth of beta-Ga2O3 by metalorganic vapor phase epitaxy using TEG and O-2 precursors. The study found that high temperatures and input VI/III ratios are necessary for complete combustion of hydrocarbons and H-2, and the use of an inert gas as a carrier gas is also essential for high-temperature beta-Ga2O3 growth. An oriented smooth beta-Ga2O3 layer was successfully grown on a c-plane sapphire substrate at 900 degrees C with specific growth conditions.