4.8 Article

A New User-Configurable Method to Improve Short-Circuit Ruggedness of 1.2-kV SiC Power MOSFETs

Related references

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Proceedings Paper Engineering, Electrical & Electronic

Enhancing Short Circuit Capability of 1.2 kV SiC Power MOSFETs using a Gate-Source Shorted Si Depletion-Mode MOSFET in Series with the Source

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2019 IEEE 13TH INTERNATIONAL CONFERENCE ON POWER ELECTRONICS AND DRIVE SYSTEMS (PEDS) (2019)