4.8 Article

A New User-Configurable Method to Improve Short-Circuit Ruggedness of 1.2-kV SiC Power MOSFETs

Journal

IEEE TRANSACTIONS ON POWER ELECTRONICS
Volume 36, Issue 2, Pages 2059-2067

Publisher

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TPEL.2020.3010154

Keywords

MOSFET; Silicon carbide; Logic gates; Silicon; Topology; Switching loss; Switches; Power MOSFET; programmable control; robustness; short-circuit currents; silicon carbide

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By utilizing an enhancement mode MOSFET and reducing gate bias, the short-circuit withstand time of SiC power MOSFETs can be significantly improved, although there will be increases in on-resistance and switching loss.
Silicon carbide (SiC) power MOSFETs have been commercialized to replace silicon insulated gate bipolar transistors (IGBTs) in power conversion applications. However, the short-circuit ruggedness of SiC power MOSFETs must be enhanced to match that of Si IGBTs for application in motor drives for electric vehicles. A new, user-configurable method with a series-connected, Si enhancement mode MOSFET (EMM) is demonstrated to improve the short-circuit withstand time of commercially available 1.2-kV SiC power MOSFETs by 86% with a 4.2% increase in on-resistance and a 13% increase in switching loss. In contrast, operating the 1.2-kV SiC power MOSFET with a reduced gate bias of 15 V produces an 80% improvement in short-circuit withstand time with 31% increase in on-resistance and a 31% increase in switching loss. It is demonstrated that the drain of the EMM can be used as a sensing node to monitor on-state current and to detect short-circuit events.

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